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MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
CM1000DU-34NF
q IC ................................................................ 1000A q VCES.......................................................... 1700V q Insulated
Type q 2-elements in a pack
APPLICATION General purpose inverters Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
A,B HOUSING Type
(J. S. T. Mfg. Co. Ltd)
A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate)
150 137.50.25 42 14 14
Tc measured point (The side of Cu 12 2 base plate)
21 11 19 380.25 42.50.25 380.25 740.25 740.25
34.6 +1.0 -0.5 4
15.7
A
G1 E1 G2 E2
C1
8-f6.5 MOUNTING HOLES
PPS
E2
C1
10.5
B
15.7 5.5
18
129.5 166
9-M6 NUTS 12
14 14 14 14 14 14 42 42
25.1
LABEL
C2 C2E1 E2 C1
C1
CIRCUIT DIAGRAM
G1 E1
E2 G2
C2E1
C2
1.9 0.2
34.6 +1.0 -0.5
Sep. 2004
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature*3 Isolation voltage Torque strength Weight G-E Short C-E Short TC' = 104C Pulse TC = 25C Pulse TC' = 25C Conditions Ratings 1700 20 1000 2000 1000 2000 8900 -40 ~ +150 -40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W C C V N*m N*m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C)
Symbol ICES VGE(th) IGES VCE(sat)
(chip)
Parameter Collector cutoff current
Test conditions VCE = VCES, VGE = 0V
Min. -- 5.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.47
Limits Typ. -- 7 -- 2.2 2.45 0.286 -- -- -- 6000 -- -- -- -- -- 90 2.3 -- -- 0.016 --
Max. 1 8.5 5 2.8 -- -- 220 25 4.7 -- 600 150 900 200 450 -- 3 0.014 0.023 -- 4.7
Unit mA V A V m nF nC
Gate-emitter threshold voltage IC = 100mA, VCE = 10V Gate leakage current Collector-emitter saturation voltage (without lead resistance) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage (without lead resistance) Thermal resistance*1 Contact thermal resistance*2 External gate resistance VGE = VGES, VCE = 0V Tj = 25C IC = 1000A, VGE = 15V Tj = 125C Ic = 1000A, terminal-chip VCE = 10V VGE = 0V VCC = 1000V, IC = 1000A, VGE = 15V VCC = 1000V, IC = 1000A VGE1 = VGE2 = 15V RG = 0.47, Inductive load switching operation IE = 1000A
(Note 4)
R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1)
(chip)
ns
ns C V C/W
IE = 1000A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied (1/2 module)
Rth(j-c')Q Rth(j-c')R Rth(c-f) RG
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) dose not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : The operation temperature is restrained by the permission temperature of female connector.
Sep. 2004
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2000
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 2000 VCE = 10V
COLLECTOR CURRENT (A)
VGE = 20V 15V 13V
Tj = 25C
1600
12V
1600
1200 11V
1200
800
800
400 8V 0 0 2 4 6 8
10V 9V 10
400 Tj = 25C Tj = 125C 0 0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C
VGE = 15V
4
8
IC = 400A IC = 1000A IC = 2000A
3
6
2
4
1 Tj = 25C Tj = 125C 0 0 500 1000 1500 2000
2
0
0
4
8
12
16
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
104
EMITTER CURRENT IE (A)
7 5 3 2
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
103
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
CAPACITANCE-VCE CHARACTERISTICS (TYPICAL)
Cies
102
103
7 5 3 2
101
Coes
100
Cres
Tj = 25C Tj = 125C 1 2 3 4
102
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Sep. 2004
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104
7 5 3 2
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 104
7 5 3 2
SWITCHING TIMES (ns)
103
7 5 3 2
td(off) td(on) tf tr Conditions: VCC = 1000V VGE = 15V RG = 0.47 Tj = 125C Inductive load
2 3 5 7 104
103
7 5 3 2
Irr trr
102
7 5 3 2
101 2 10
2
3
5 7 103
102 2 10
Conditions: VCC = 1000V VGE = 15V RG = 0.47 Tj = 25C Inductive load
2 3 5 7 104
2
3
5 7 103
COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c') (C/W)
EMITTER CURRENT IE (A)
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101
GATE-EMITTER VOLTAGE VGE (V)
Single Pulse IGBT part: Per unit base = Rth(j-c') = 0.014C/W FWDi part: Per unit base = Rth(j-c') = 0.023C/W 100 7 5 3 2 7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 1000A 16 VCC = 800V
3 2
12
VCC = 1000V
10-1
7 5 3 2
10-1
7 5 3 2 7 5 3 2
8
10-2
10-3
7 5 TC' measured 3 point is just 2 under the chips
10-2
4
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s)
0
0
2000
4000
6000
8000
10000
GATE CHARGE QG (nC)
IC-ESW (TYPICAL) 103
7 5 3 2
RG-ESW (TYPICAL) 103
7 5
Eon Eoff
Eon, Eoff, Err (mJ/pulse)
Eon, Eoff, Err (mJ/pulse)
Err
Eoff Eon
3 2
102
7 5 3 2
Err 102
7 5 3 2
101
7 5 3 2
100 2 10
Conditions: VCC = 1000V VGE = 15V RG = 0.47 Tj = 125C Inductive load
2 3 5 7 103 2 3 5 7 104
101
Conditions: VCC = 1000V VGE = 15V IC = 1000A Tj = 125C Inductive load 0 1 2 RG ()
Sep. 2004
3
4
5
IC (A)

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